8
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
W-CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK?TO?AVERAGE (dB)
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
PROBABILITY (%)
W?CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset
PAR = 8.5 dB @ 0.01% Probability on CCDF
?60
?110
?10
(dB)
?20
?30
?40
?50
?70
?80
?90
?100
3.84 MHz
Channel BW
?9 9?7.2
7.2
1.8 5.43.6
0
?5.4
?3.6
?1.8
f, FREQUENCY (MHz)
Figure 16. Single-Carrier W-CDMA Spectrum
?ACPR in 3.84 MHz
Integrated BW
?ACPR in 3.84 MHz
Integrated BW
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相关代理商/技术参数
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MRF6S27085HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
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MRF6S27085HR5 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S27085HS 制造商:Freescale Semiconductor 功能描述:
MRF6S27085HSR3 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S27085HSR5 功能描述:射频MOSFET电源晶体管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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